PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 12A 1.05Ω 300ns PLUS220 (IXFV) G D S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25.
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Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 100 V V nA Applications
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High Power Density Easy to Mount Space Savings
20 μA 1.0 mA 1.05 Ω
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VGS = 10V, ID = 0.5
• ID25, Note 1
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFV12N100PS |
IXYS Corporation |
Polar HiPerFET Power MOSFETs | |
2 | IXFV12N80P |
IXYS |
Power MOSFET | |
3 | IXFV12N80PS |
IXYS |
Power MOSFET | |
4 | IXFV110N10P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
5 | IXFV110N10PS |
IXYS |
PolarHT HiPerFET Power MOSFET | |
6 | IXFV110N25T |
IXYS Corporation |
Trench Gate Power HiperFET | |
7 | IXFV110N25TS |
IXYS Corporation |
Trench Gate Power HiperFET | |
8 | IXFV14N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
9 | IXFV14N80PS |
IXYS Corporation |
Power MOSFET | |
10 | IXFV15N100P |
IXYS Corporation |
Power MOSFET | |
11 | IXFV15N100PS |
IXYS Corporation |
Power MOSFET | |
12 | IXFV16N80P |
IXYS Corporation |
PolarHV Power MOSFET |