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Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Cont.
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect G = Gate S = Source D = Drain G D S ISOPLUS247 (IXFR) E153432 50/60 Hz, RMS, 1 minute Mounting torque Isoplus247 1.13/10 Nm/lb.in. 5 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFR36N50P |
IXYS Corporation |
Polar MOSFETs |
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| 2 | IXFR30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
|
| 3 | IXFR30N50Q |
IXYS Corporation |
Power MOSFET |
|
| 4 | IXFR30N60P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET |
|
| 5 | IXFR32N100Q3 |
IXYS |
Power MOSFET |
|
| 6 | IXFR32N50Q |
IXYS Corporation |
Power MOSFET |
|
| 7 | IXFR32N80Q3 |
IXYS |
Power MOSFET |
|
| 8 | IXFR34N80 |
IXYS Corporation |
Single MOSFET Die Avalanche Rated |
|
| 9 | IXFR38N80Q2 |
IXYS Corporation |
Electrically Isolated Back Surface |
|
| 10 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 11 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET |
|
| 12 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
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