Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFR32N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Li.
Silicon Chip on Direct-Copper Bond (DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
© 2020 IXYS CORPORATION, All Rights Reserved
DS100362C(1/20)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 16A, Note 1
Ciss Coss Cr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFR32N100Q3 |
IXYS |
Power MOSFET | |
2 | IXFR32N50Q |
IXYS Corporation |
Power MOSFET | |
3 | IXFR30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
4 | IXFR30N50Q |
IXYS Corporation |
Power MOSFET | |
5 | IXFR30N60P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
6 | IXFR34N80 |
IXYS Corporation |
Single MOSFET Die Avalanche Rated | |
7 | IXFR36N50P |
IXYS Corporation |
Polar MOSFETs | |
8 | IXFR36N60P |
IXYS |
Power MOSFET | |
9 | IXFR38N80Q2 |
IXYS Corporation |
Electrically Isolated Back Surface | |
10 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
11 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET | |
12 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |