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IXFR36N60P |
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| Part Number | IXFR36N60P |
| Manufacturer | IXYS |
| Description | Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data S... |
| Features |
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect G = Gate S = Source D = Drain G D S ISOPLUS247 (IXFR) E153432
50/60 Hz, RMS, 1 minute Mounting torque Isoplus247
1.13/10 Nm/lb.in. 5 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on... |
| Document |
 IXFR36N60P Data Sheet
PDF 104.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFR36N50P |
IXYS Corporation |
Polar MOSFETs |
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| 2 | IXFR30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
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| 3 | IXFR30N50Q |
IXYS Corporation |
Power MOSFET |
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| 4 | IXFR30N60P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET |
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| 5 | IXFR32N100Q3 |
IXYS |
Power MOSFET |
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