IXFR14N80 - IXYS

IXFR14N80 Power MOSFET

HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family rr V = 800 DSS ID25 = 14 =RDS(on) 0.7 V A Ω trr ≤ 250 ns Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD T J TJM T stg TL VISOL Weight Symbol VDSS V GS(th) IGSS IDSS Test Conditions TJ = 25°C to 150°C TJ = 25°C .

Features

°C z Isolated mounting tab °C z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure °C z Unclamped Inductive Switching (UIS) V rated z Low drain to tab capacitance(<25pF) g z Fast intrinsic Rectifier Test Conditions VGS = 0 V, ID = 3 mA V = V , I = 4 mA DS GS D VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 250 µA 1 mA Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control .