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IXFR102N30P |
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| Part Number | IXFR102N30P |
| Manufacturer | IXYS |
| Description | Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 n... |
| Features |
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force
300 2500 22..130/5..29 5
Advantages
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Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 36 V V nA µA µA mΩ
VGS = 10 V, ID = 51 A... |
| Document |
 IXFR102N30P Data Sheet
PDF 110.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 2 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
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| 3 | IXFR10N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
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| 4 | IXFR120N20 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 |
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| 5 | IXFR120N25P |
IXYS |
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