IXFQ30N50P - IXYS

IXFQ30N50P Power MOSFET

Advance Technical Information PolarHVTM Power HiPerFET MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS VDSS ID25 RDS(on) trr = 500 V = 30 A = 200 mΩ < 200 ns www.DataSheet4U.com TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test .

Features

z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect DS99414(06/05) © 2005 IXYS All rights reserved IXFH 30N50P IXFQ 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 17 27 4150 VGS = 0 V, VDS = 25 V, f = 1 MHz 445 28 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 Ω (External) 27 75 21 70 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 22 S pF pF pF ns ns ns ns nC nC nC 0.23 K/W (TO-247, PLUS220, TO-3P) 0.21 K/W www.DataSh.