IXFQ24N50P2 - IXYS Corporation

IXFQ24N50P2 Power MOSFET

Advance Technical Information PolarP2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFQ24N50P2 VDSS ID25 RDS(on) trr(typ) = = ≤ ≤ 500V 24A 270mΩ 200ns TO-3P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to.

Features

z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 300 260 1.13/10 5.5 Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 2.5 4.5 V V z z z z z ± 100 nA 25 μA 1 mA 270 mΩ Switch-Mode and Resonant-Mode Power Supplies DC-DC Convert.