Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 AA (IXFA) VDSS = ID25 = RDS(on) 500V 20A 300m TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight G S D (Tab) .
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2013 IXYS CORPORATION, All Rights Reserved
DS100414A(11/13)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5
• ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on) tr td(off) tf
Resistive Switching Times
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFQ22N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFETs | |
2 | IXFQ22N60P3 |
IXYS Corporation |
Power MOSFET | |
3 | IXFQ24N50P2 |
IXYS Corporation |
Power MOSFET | |
4 | IXFQ24N60X |
IXYS |
Power MOSFET | |
5 | IXFQ24N60X |
INCHANGE |
N-Channel MOSFET | |
6 | IXFQ26N60P |
IXYS Corporation |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | |
7 | IXFQ28N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFETs | |
8 | IXFQ10N80P |
IXYS Corporation |
Power MOSFET | |
9 | IXFQ12N80P |
IXYS |
Power MOSFET | |
10 | IXFQ140N20X3 |
IXYS |
Power MOSFET | |
11 | IXFQ14N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
12 | IXFQ30N50P |
IXYS |
Power MOSFET |