PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) = 800V = 10A ≤ 1.1Ω ≤ 250ns TO-3P (IXFQ) G S D (TAB) G DS D (TAB) G D S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md .
z z z z
1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-3P TO-247 (TO-220,TO-247)
300 260 1.13 / 10 2.5 3.0 5.5 6.0 Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25
International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect
Advantages
z z z
Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 0.5
• ID25, N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFQ12N80P |
IXYS |
Power MOSFET | |
2 | IXFQ140N20X3 |
IXYS |
Power MOSFET | |
3 | IXFQ14N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
4 | IXFQ20N50P3 |
IXYS |
Power MOSFET | |
5 | IXFQ22N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFETs | |
6 | IXFQ22N60P3 |
IXYS Corporation |
Power MOSFET | |
7 | IXFQ24N50P2 |
IXYS Corporation |
Power MOSFET | |
8 | IXFQ24N60X |
IXYS |
Power MOSFET | |
9 | IXFQ24N60X |
INCHANGE |
N-Channel MOSFET | |
10 | IXFQ26N60P |
IXYS Corporation |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | |
11 | IXFQ28N60P3 |
IXYS Corporation |
Polar3 HiperFET Power MOSFETs | |
12 | IXFQ30N50P |
IXYS |
Power MOSFET |