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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFP12N65X2M ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt.
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
24
PD
Total Dissipation
40
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal.
IXFP12N65X2M - IXYS
X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP12N65X2M D G S VDSS = ID25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFP12N65X2 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXFP12N65X2 |
IXYS |
Power MOSFET |
|
| 3 | IXFP12N50P |
IXYS Corporation |
Polar MOSFETs |
|
| 4 | IXFP12N50PM |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXFP102N15T |
IXYS Corporation |
Power MOSFET |
|
| 6 | IXFP102N15T |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXFP10N60P |
IXYS Corporation |
Polar MOSFETs |
|
| 8 | IXFP10N80P |
IXYS Corporation |
Power MOSFET |
|
| 9 | IXFP110N15T2 |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXFP110N15T2 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXFP130N10T |
IXYS Corporation |
Power MOSFET |
|
| 12 | IXFP130N10T |
INCHANGE |
N-Channel MOSFET |
|