IXFN24N100F - IXYS Corporation

IXFN24N100F HiPerRF Power MOSFETs

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr D trr ≤ 250 ns G S S Symbol www.DataSheet4U.com V DSS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ.

Features

l l 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 l l Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 TJ = 25°C TJ = 125°C 5.5 ± 200 V V nA l l l VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 .