Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maxim.
z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99239B(03/05) © 2005 IXYS All rights reserved IXFK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN200N06 |
IXYS |
HiPerFET Power MOSFETs | |
2 | IXFN200N07 |
IXYS |
HiPerFET Power MOSFETs | |
3 | IXFN20N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFN20N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFN220N20X3 |
IXYS |
Power MOSFET | |
6 | IXFN230N10 |
IXYS Corporation |
Power MOSFETs Single Die MOSFET | |
7 | IXFN230N20T |
IXYS |
GigaMOS Power MOSFET | |
8 | IXFN23N100 |
IXYS Corporation |
(IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET | |
9 | IXFN240N15T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
10 | IXFN24N100 |
IXYS Corporation |
(IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET | |
11 | IXFN24N100F |
IXYS Corporation |
HiPerRF Power MOSFETs | |
12 | IXFN25N80 |
IXYS Corporation |
(IXFx2xN80) HiPerFET Power MOSFETs |