IXFN230N10 - IXYS Corporation

IXFN230N10 Power MOSFETs Single Die MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, Chip capability Term.

Features

• International standard packages • miniBLOC, with Aluminium nitride • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low package inductance • Fast intrinsic Rectifier Applications rated isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 TJ = 25°C TJ = 125°C 4.0 ±200 100 2 6 V V nA µA mA mΩ • • • • • DC-DC converters Battery chargers Switched-mode and resonant-mode power suppli.