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IXFN24N100F |
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| Part Number | IXFN24N100F |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Lo... |
| Features |
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1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
2500 3000
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Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
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RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 TJ = 25°C TJ = 125°C 5.5 ± 200 V V nA
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VDSS VGH(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 1 ... |
| Document |
 IXFN24N100F Data Sheet
PDF 136.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFN24N100 |
IXYS Corporation |
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| 5 | IXFN200N10P |
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