IXFH6N120P - IXYS Corporation

IXFH6N120P Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC =.

Features

 International Standard Packages
 Dynamic dv/dt Rating
 Avalanche Rated
 Fast Intrinsic Diode
 Low QG & RDS(on)
 Low Drain-to-Tab Capacitance
 Low Package Inductance Advantages
 Easy to Mount
 Space Savings Applications
 DC-DC Converters
 Battery Chargers
 Switch-Mode and Resonant-Mode Power Supplies
 Uninterrupted Power Supplies
 AC Motor Drives
 High Speed Power Switching Applications © 2015 IXYS CORPORATION, All Rights Reserved DS100202C(0515) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
• ID25, Note 1 RGi Gate Input Resist.