IXFH6N100F - IXYS Corporation

IXFH6N100F Power MOSFETs

Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting to.

Features

● RF capable MOSFETs
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low package inductance - easy to drive and to protect
● Fast intrinsic rectifier Applications DC-DC converters
● Switched-mode and resonant-mode power supplies, >500kHz switching
● DC choppers
● 13.5 MHz industrial applications
● Pulse generation
● Laser drivers
● RF amplifiers
● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±100 nA TJ = 125°C 50 µA 1 mA 1.9 Ω VDSS VG.