IS42S32400F IS45S32400F 4M x 32 128Mb SYNCHRONOUS DRAM JUNE 2024 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst se.
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16ms (A2 grade) or
64 ms (Commercial, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst te.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS42S32400A |
Integrated Circuit Solution |
128-MBIT SYNCHRONOUS DRAM | |
2 | IS42S32400E |
ISSI |
128Mb SYNCHRONOUS DRAM | |
3 | IS42S32160D |
ISSI |
512Mb SDRAM | |
4 | IS42S32160F |
ISSI |
512Mb SDRAM | |
5 | IS42S32200 |
ISSI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM | |
6 | IS42S32200E |
ISSI |
SYNCHRONOUS DYNAMIC RAM | |
7 | IS42S32200L |
ISSI |
64-MBIT SYNCHRONOUS DYNAMIC RAM | |
8 | IS42S32200N |
ISSI |
64-MBIT SYNCHRONOUS DYNAMIC RAM | |
9 | IS42S32800 |
ISSI |
2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM | |
10 | IS42S32800B |
Integrated Silicon Solution |
SYNCHRONOUS DYNAMIC RAM | |
11 | IS42S32800D |
Integrated Silicon Solution |
8M x 32 256Mb SYNCHRONOUS DRAM | |
12 | IS42S32800G |
ISSI |
256Mb SYNCHRONOUS DRAM |