IS42R32160F, IS45R32160F IS42S32160F, IS45S32160F 16Mx32, 512Mb SDRAM NOVEMBER 2015 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5 • LVTTL inter.
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply: Vdd/Vddq = 2.3V-3.6V
IS42/45S32160F - Vdd/Vddq = 3.3V
IS42/45R32160F - Vdd/Vddq = 2.5
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Bu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS42S32160D |
ISSI |
512Mb SDRAM | |
2 | IS42S32200 |
ISSI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM | |
3 | IS42S32200E |
ISSI |
SYNCHRONOUS DYNAMIC RAM | |
4 | IS42S32200L |
ISSI |
64-MBIT SYNCHRONOUS DYNAMIC RAM | |
5 | IS42S32200N |
ISSI |
64-MBIT SYNCHRONOUS DYNAMIC RAM | |
6 | IS42S32400A |
Integrated Circuit Solution |
128-MBIT SYNCHRONOUS DRAM | |
7 | IS42S32400E |
ISSI |
128Mb SYNCHRONOUS DRAM | |
8 | IS42S32400F |
ISSI |
4M x 32 128Mb SYNCHRONOUS DRAM | |
9 | IS42S32800 |
ISSI |
2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM | |
10 | IS42S32800B |
Integrated Silicon Solution |
SYNCHRONOUS DYNAMIC RAM | |
11 | IS42S32800D |
Integrated Silicon Solution |
8M x 32 256Mb SYNCHRONOUS DRAM | |
12 | IS42S32800G |
ISSI |
256Mb SYNCHRONOUS DRAM |