IS42S32800B - Integrated Silicon Solution

IS42S32800B SYNCHRONOUS DYNAMIC RAM

The ISSI IS42S32800B is a high-speed CMOS configured as a quad 2M x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 2M x 32 bit banks is organized as 4096 rows by 512 columns by 32 bits.Read and write accesses start at a selected locations in a programmed sequence. Accesses begin wit.

Features

· Concurrent auto precharge
· Clock rate:166/143 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (2M x 32bit x 4bank)
· Programmable Mode -CAS#Latency:2 or 3 -Burst Length:1,2,4,8,or full page -Burst Type:interleaved or linear burst -Burst-Read-Single-Write
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms (15.6µs/row)
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 86 Pin TSOP-2,0.50mm Pin Pitch 8x13mm, 90 Ball BGA, Ball pitch 0.8mm
· Pb-free package is available. ww.