isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743,IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·AB.
·Static drain-source on-resistance:
RDS(on) ≤3.2mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
150
IDM
Drain Current-Single Pulsed
620
PD
Total Dissipation @TC=25℃
140
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLB8743PBF |
International Rectifier |
30V Single N-Channel Power MOSFET | |
2 | IRLB8748 |
INCHANGE |
N-Channel MOSFET | |
3 | IRLB8748PBF |
International Rectifier |
Power MOSFET | |
4 | IRLB8721 |
INCHANGE |
N-Channel MOSFET | |
5 | IRLB8721PBF |
International Rectifier |
30V Single N-Channel HEXFET Power MOSFET | |
6 | IRLB8314PbF |
Infineon |
Power MOSFET | |
7 | IRLB8314PbF |
International Rectifier |
Power MOSFET | |
8 | IRLB3034PBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
9 | IRLB3036 |
INCHANGE |
N-Channel MOSFET | |
10 | IRLB3036PBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET | |
11 | IRLB3813 |
INCHANGE |
N-Channel MOSFET | |
12 | IRLB3813PBF |
International Rectifier |
Power MOSFET |