PD - 97357 IRLB3036PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche an.
issipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Max. 270 190 195 1100 380 2.5 ±16 8.0 c c Units A d W W/°C V V/ns °C f -55 to + 175 300 10lb in (1.1N m) 290 See Fig. 14, 15, 22a, 22b mJ A mJ Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d e g Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Grea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLB3036 |
INCHANGE |
N-Channel MOSFET | |
2 | IRLB3034PBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
3 | IRLB3813 |
INCHANGE |
N-Channel MOSFET | |
4 | IRLB3813PBF |
International Rectifier |
Power MOSFET | |
5 | IRLB4030 |
INCHANGE |
N-Channel MOSFET | |
6 | IRLB4030PBF |
International Rectifier |
100V Single N-Channel HEXFET Power MOSFET | |
7 | IRLB4132 |
Infineon |
Power MOSFET | |
8 | IRLB4132 |
INCHANGE |
N-Channel MOSFET | |
9 | IRLB4132PbF |
International Rectifier |
Power MOSFET | |
10 | IRLB4132PbF |
Infineon |
Power MOSFET | |
11 | IRLB8314PbF |
Infineon |
Power MOSFET | |
12 | IRLB8314PbF |
International Rectifier |
Power MOSFET |