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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8721，IIRLB8721 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·AB.
·Static drain-source on-resistance:
RDS(on) ≤8.7mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
62
IDM
Drain Current-Single Pulsed
250
PD
Total Dissipation @TC=25℃
65
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRLB8721PBF |
International Rectifier |
30V Single N-Channel HEXFET Power MOSFET |
|
| 2 | IRLB8743 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRLB8743PBF |
International Rectifier |
30V Single N-Channel Power MOSFET |
|
| 4 | IRLB8748 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRLB8748PBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRLB8314PbF |
Infineon |
Power MOSFET |
|
| 7 | IRLB8314PbF |
International Rectifier |
Power MOSFET |
|
| 8 | IRLB3034PBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET |
|
| 9 | IRLB3036 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IRLB3036PBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET |
|
| 11 | IRLB3813 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IRLB3813PBF |
International Rectifier |
Power MOSFET |
|