isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB3813,IIRLB3813 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.95mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·A.
·Static drain-source on-resistance:
RDS(on) ≤1.95mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
260
IDM
Drain Current-Single Pulsed
1050
PD
Total Dissipation @TC=25℃
230
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLB3813PBF |
International Rectifier |
Power MOSFET | |
2 | IRLB3034PBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
3 | IRLB3036 |
INCHANGE |
N-Channel MOSFET | |
4 | IRLB3036PBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET | |
5 | IRLB4030 |
INCHANGE |
N-Channel MOSFET | |
6 | IRLB4030PBF |
International Rectifier |
100V Single N-Channel HEXFET Power MOSFET | |
7 | IRLB4132 |
Infineon |
Power MOSFET | |
8 | IRLB4132 |
INCHANGE |
N-Channel MOSFET | |
9 | IRLB4132PbF |
International Rectifier |
Power MOSFET | |
10 | IRLB4132PbF |
Infineon |
Power MOSFET | |
11 | IRLB8314PbF |
Infineon |
Power MOSFET | |
12 | IRLB8314PbF |
International Rectifier |
Power MOSFET |