Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance .
Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)
*
* Linear Derating Factor Linear Derating Factor (PCB Mount)
*
* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
9.0 5.7 36 74 3.1 0.59 0.025 ±10 250 9.0 7.4 5.0 -55 to + 150 300 (1.6mm from case)
Units
A
W W/°C V mJ A mJ V/ns °C
VGS EAS IAR EAR dv/dt TJ, TSTG
Thermal Resistance
Parameter
RθJC RθJA RθJA J.
$GYDQFHG 3RZHU 026)(7 IRL630S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL630 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRL630 |
International Rectifier |
POWER MOSFET | |
3 | IRL630 |
Vishay |
Power MOSFET | |
4 | IRL630A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
5 | IRL630PBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRL630SPBF |
International Rectifier |
POWER MOSFET | |
7 | IRL6342PbF |
International Rectifier |
POWER MOSFET | |
8 | IRL6372PBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRL60B216 |
International Rectifier |
Power MOSFET | |
10 | IRL60B216 |
INCHANGE |
N-Channel MOSFET | |
11 | IRL60HS118 |
Infineon |
MOSFET | |
12 | IRL60S216 |
Infineon |
IR MOSFET |