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IRL630S - International Rectifier

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IRL630S POWER MOSFET

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance .

Features

Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)
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* Linear Derating Factor Linear Derating Factor (PCB Mount)
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* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.0 5.7 36 74 3.1 0.59 0.025 ±10 250 9.0 7.4 5.0 -55 to + 150 300 (1.6mm from case) Units A W W/°C V mJ A mJ V/ns °C VGS EAS IAR EAR dv/dt TJ, TSTG Thermal Resistance Parameter RθJC RθJA RθJA J.

The same part from a different manufacturer

Datasheet IRL630S - Fairchild Semiconductor IRL630S

$GYDQFHG 3RZHU 026)(7 IRL630S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa.

Datasheet IRL630S - Vishay IRL630S

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