$GYDQFHG 3RZHU 026)(7 IRL630 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ.
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Dio.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, .
G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL630A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | IRL630PBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRL630S |
Fairchild Semiconductor |
Power MOSFET | |
4 | IRL630S |
International Rectifier |
POWER MOSFET | |
5 | IRL630S |
Vishay |
Power MOSFET | |
6 | IRL630SPBF |
International Rectifier |
POWER MOSFET | |
7 | IRL6342PbF |
International Rectifier |
POWER MOSFET | |
8 | IRL6372PBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRL60B216 |
International Rectifier |
Power MOSFET | |
10 | IRL60B216 |
INCHANGE |
N-Channel MOSFET | |
11 | IRL60HS118 |
Infineon |
MOSFET | |
12 | IRL60S216 |
Infineon |
IR MOSFET |