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IRL530NL |
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| Part Number | IRL530NL |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
le for lowprofile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC RθJA
Parameter Junction-t... |
| Document |
 IRL530NL Data Sheet
PDF 281.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRL530N |
IRF |
HEXFET Power MOSFET |
|
| 2 | IRL530N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRL530NL |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRL530NLPbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRL530NPBF |
International Rectifier |
Power MOSFET |
|