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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sour.
·With To-262 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±16
V
ID
Drain Current-ContinuousTc=25℃ Tc=100℃
10 7.1
A
IDM
Drain Current-Single Pulsed
35
A
PD
Total Dissipation @TC=25℃
48
W
Tch
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·THER.
IRL520NL - International Rectifier
l HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID = 10A S Fifth Generation HEXFETs from International Recti.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRL520N |
IRF |
HEXFET Power MOSFET |
|
| 2 | IRL520N |
INCHANGE |
TO-220C N-Channel MOSFET |
|
| 3 | IRL520N |
INCHANGE |
TO-220F N-Channel MOSFET |
|
| 4 | IRL520NLPbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRL520NPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRL520NS |
International Rectifier |
Power MOSFET |
|
| 7 | IRL520NS |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRL520NSPbF |
International Rectifier |
Power MOSFET |
|
| 9 | IRL520 |
Vishay |
Power MOSFET |
|
| 10 | IRL520 |
International Rectifier |
Power MOSFET |
|
| 11 | IRL520A |
Fairchild |
Advenced Power MOSFET |
|
| 12 | IRL520L |
Vishay |
Power MOSFET |
|