Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package .
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• 175 °C operating temperature
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL520A |
Fairchild |
Advenced Power MOSFET | |
2 | IRL520L |
Vishay |
Power MOSFET | |
3 | IRL520N |
IRF |
HEXFET Power MOSFET | |
4 | IRL520N |
INCHANGE |
TO-220C N-Channel MOSFET | |
5 | IRL520N |
INCHANGE |
TO-220F N-Channel MOSFET | |
6 | IRL520NL |
International Rectifier |
Power MOSFET | |
7 | IRL520NL |
INCHANGE |
N-Channel MOSFET | |
8 | IRL520NLPbF |
International Rectifier |
Power MOSFET | |
9 | IRL520NPBF |
International Rectifier |
Power MOSFET | |
10 | IRL520NS |
International Rectifier |
Power MOSFET | |
11 | IRL520NS |
INCHANGE |
N-Channel MOSFET | |
12 | IRL520NSPbF |
International Rectifier |
Power MOSFET |