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isc N-Channel MOSFET Transistor IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXI.
·Static drain-source on-resistance:
RDS(on) ≤0.18Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
10
IDM
Drain Current-Single Pulsed
35
PD
Total Dissipation @TC=25℃
48
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
U.
IRL520N - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fas.
IRL520N - IRF
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRL520 |
Vishay |
Power MOSFET |
|
| 2 | IRL520 |
International Rectifier |
Power MOSFET |
|
| 3 | IRL520A |
Fairchild |
Advenced Power MOSFET |
|
| 4 | IRL520L |
Vishay |
Power MOSFET |
|
| 5 | IRL520NL |
International Rectifier |
Power MOSFET |
|
| 6 | IRL520NL |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRL520NLPbF |
International Rectifier |
Power MOSFET |
|
| 8 | IRL520NPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRL520NS |
International Rectifier |
Power MOSFET |
|
| 10 | IRL520NS |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRL520NSPbF |
International Rectifier |
Power MOSFET |
|
| 12 | IRL520S |
International Rectifier |
Power MOSFET |
|