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IRL520NL |
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| Part Number | IRL520NL |
| Manufacturer | International Rectifier |
| Description | l HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan... |
| Features |
ction resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL520NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ... |
| Document |
 IRL520NL Data Sheet
PDF 201.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL520N |
IRF |
HEXFET Power MOSFET |
|
| 2 | IRL520N |
INCHANGE |
TO-220C N-Channel MOSFET |
|
| 3 | IRL520N |
INCHANGE |
TO-220F N-Channel MOSFET |
|
| 4 | IRL520NL |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRL520NLPbF |
International Rectifier |
Power MOSFET |
|