Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters StrongIRFET™ IRL40B215 HEXFET® Power MOSFET D V.
2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 175 150 125 100 75 50 25 0 25 Limited By Package 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback April 27, 2015 IRL40B215 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current.
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B215,IIRL40B215 ·FEATURES ·Static drain-source on-resistan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL40B212 |
International Rectifier |
Power MOSFET | |
2 | IRL40B212 |
INCHANGE |
N-Channel MOSFET | |
3 | IRL40B209 |
International Rectifier |
Power MOSFET | |
4 | IRL40S212 |
International Rectifier |
Power MOSFET | |
5 | IRL40S212 |
INCHANGE |
N-Channel MOSFET | |
6 | IRL40SC209 |
Infineon |
Power MOSFET | |
7 | IRL40SC228 |
Infineon |
Power MOSFET | |
8 | IRL1004 |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRL1004 |
INCHANGE |
N-Channel MOSFET | |
10 | IRL1004L |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRL1004LPBF |
International Rectifier |
Power MOSFET | |
12 | IRL1004PBF |
International Rectifier |
Power MOSFET |