IRL40B215 |
Part Number | IRL40B215 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B215,IIRL40B215 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche teste... |
Features |
·Static drain-source on-resistance: RDS(on) ≤2.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 656 PD Total Dissipation @TC=25℃ 143 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
Document |
IRL40B215 Data Sheet
PDF 241.93KB |
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