IRL40SC228 - Infineon

IRL40SC228 Power MOSFET

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters IR MOSFET StrongIRFET™ IRL40SC228 HEXFET® Power MO.

Features

(A) 5 ID = 100A 4 3 2 TJ = 125°C 1 0 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 600 LIMITED BY PACKAGE 500 400 300 200 100 0 25 50 75 100 125 150 175 TC, Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature 2017-05-12 IRL40SC228 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Li.