IRHN4150 - International Rectifier

IRHN4150 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 90720C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number IRHN7150 IRHN3150 IRHN4150 IRHN8150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω 300K Rads (Si) 0.065Ω 600K Rads (Si) 0.065Ω 1000K Rads (Si) 0.065Ω ID 34A 34A 34A 34A IRHN7150 JANSR2N7268U 100V, N-CHANNEL REF: MIL-PRF-19500/603 ® ™ RAD Hard H.

Features

n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery d.