www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1313A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7450SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failur.
s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHN7450 |
International Rectifier |
(IRHN7450 / IRHN8450) HEXFET TRANSISTOR | |
2 | IRHN7130 |
International Rectifier |
Radiation Hardened Power MOSFET | |
3 | IRHN7150 |
International Rectifier |
Radiation Hardened Power MOSFET | |
4 | IRHN7230 |
International Rectifier |
N-Channel Transistor | |
5 | IRHN7250 |
International Rectifier |
Radiation Hardened Power MOSFET | |
6 | IRHN7250SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
7 | IRHN7C50SE |
International Rectifier |
N-Channel Transistor | |
8 | IRHN2C50SE |
International Rectifier |
N-Channel Transistor | |
9 | IRHN3150 |
International Rectifier |
Radiation Hardened Power MOSFET | |
10 | IRHN4150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
11 | IRHN8150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
12 | IRHN8230 |
International Rectifier |
N-Channel Transistor |