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IRHN4150 |
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| Part Number | IRHN4150 |
| Manufacturer | International Rectifier |
| Description | www.DataSheet4U.com PD - 90720C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number IRHN7150 IRHN3150 IRHN4150 IRHN8150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω 30... |
| Features |
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery d... |
| Document |
 IRHN4150 Data Sheet
PDF 1.56MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRHN2C50SE |
International Rectifier |
N-Channel Transistor |
|
| 2 | IRHN3150 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 3 | IRHN7130 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 4 | IRHN7150 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 5 | IRHN7230 |
International Rectifier |
N-Channel Transistor |
|