IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power lo.
Single event effect (SEE) hardened
Low RDS(on)
Low total gate charge
Proton tolerant
Simple drive requirements
Hermetically sealed
Ceramic package
Light weight
ESD rating: Class 1C per MIL-STD-750, Method 1020
Product Summary
BVDSS: 100V
ID : 14A
RDS(on),max : 180m
QG,max : 45nC
Potential Applications
DC-DC converter
Motor drives
SMD-1
Product Validation
Qualified according to MIL-PRF-19500 for space applications
Description
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHN7150 |
International Rectifier |
Radiation Hardened Power MOSFET | |
2 | IRHN7230 |
International Rectifier |
N-Channel Transistor | |
3 | IRHN7250 |
International Rectifier |
Radiation Hardened Power MOSFET | |
4 | IRHN7250SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
5 | IRHN7450 |
International Rectifier |
(IRHN7450 / IRHN8450) HEXFET TRANSISTOR | |
6 | IRHN7450SE |
International Rectifier |
TRANSISTOR N-CHANNEL | |
7 | IRHN7C50SE |
International Rectifier |
N-Channel Transistor | |
8 | IRHN2C50SE |
International Rectifier |
N-Channel Transistor | |
9 | IRHN3150 |
International Rectifier |
Radiation Hardened Power MOSFET | |
10 | IRHN4150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
11 | IRHN8150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
12 | IRHN8230 |
International Rectifier |
N-Channel Transistor |