IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor contr.
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHMS597064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
2 | IRHMS597160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
3 | IRHMS597Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
4 | IRHMS593064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
5 | IRHMS593160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
6 | IRHMS593260 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
7 | IRHMS57064 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
8 | IRHMS57160 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
9 | IRHMS57163SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
10 | IRHMS57260SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
11 | IRHMS57264SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
12 | IRHMS57Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |