IRHMS597064 is a part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge .
Single Event Effect (SEE) Hardened
Fast Switching
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Light Weight
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR EAR dv/dt
Avalanche Current Repet.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHMS597160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
2 | IRHMS597260 |
IRF |
RADIATION HARDENED POWER MOSFET | |
3 | IRHMS597Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
4 | IRHMS593064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
5 | IRHMS593160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
6 | IRHMS593260 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
7 | IRHMS57064 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
8 | IRHMS57160 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
9 | IRHMS57163SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
10 | IRHMS57260SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
11 | IRHMS57264SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
12 | IRHMS57Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |