PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A* -45A* IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs .
n n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight High Electrical Conductive Package Absolute Maximum Ratings Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHMS593064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
2 | IRHMS593260 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
3 | IRHMS597064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
4 | IRHMS597160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
5 | IRHMS597260 |
IRF |
RADIATION HARDENED POWER MOSFET | |
6 | IRHMS597Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
7 | IRHMS57064 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
8 | IRHMS57160 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
9 | IRHMS57163SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
10 | IRHMS57260SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
11 | IRHMS57264SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
12 | IRHMS57Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |