PD-95889D IRHMS57160 RADIATION HARDENED JANSR2N7471T1 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/698 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57160 100K Rads (Si) 0.013Ω 45A* JANSR2N7471T1 IRHMS53160 300K Rads (Si) 0.013Ω 45A* JANSF2N7471T1 IRHMS54160 500K Rads .
n Low RDS(on)
n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
n ESD Rating: Class 3B per MIL-STD-750, Method 1020
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor
Units
45
*
45
* A
180
208 W
1.67
W/°C
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHMS57163SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
2 | IRHMS57064 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
3 | IRHMS57260SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
4 | IRHMS57264SE |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
5 | IRHMS57Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
6 | IRHMS593064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
7 | IRHMS593160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
8 | IRHMS593260 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
9 | IRHMS597064 |
International Rectifier |
P-CHANNEL POWER MOSFET | |
10 | IRHMS597160 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
11 | IRHMS597260 |
IRF |
RADIATION HARDENED POWER MOSFET | |
12 | IRHMS597Z60 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |