IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-.
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC C Collector E GC IRGP4750D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4750DPbF IRGP4750D-EPbF Package Type TO-2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGP4750DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
2 | IRGP4740D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
3 | IRGP4740DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
4 | IRGP4760-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
5 | IRGP4760D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
6 | IRGP4760DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
7 | IRGP4760PbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
8 | IRGP4790-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
9 | IRGP4790D-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGP4790DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGP4790PBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
12 | IRGP4050 |
IRF |
PDP Switch |