IRGP4750D-EPbF |
Part Number | IRGP4750D-EPbF |
Manufacturer | International Rectifier |
Description | IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications Industrial Motor Drive UPS Solar Inverters Welding F... |
Features |
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
G
E
n-channel
G Gate
E GC
IRGP4750DPbF TO‐247AC
C Collector
E GC
IRGP4750D‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP4750DPbF IRGP4750D-EPbF
Package Type
TO-2... |
Document |
IRGP4750D-EPbF Data Sheet
PDF 652.44KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGP4750DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
2 | IRGP4740D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
3 | IRGP4740DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
4 | IRGP4760-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
5 | IRGP4760D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |