IRGP4740DPbF IRGP4740D-EPbF VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C G Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E C E G C E n-channel G Gate IRGP4740DPbF TO-247AC C Collector IRGP4740D-EPbF TO-2.
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGP4740D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
2 | IRGP4750D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
3 | IRGP4750DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
4 | IRGP4760-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
5 | IRGP4760D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
6 | IRGP4760DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
7 | IRGP4760PbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
8 | IRGP4790-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
9 | IRGP4790D-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGP4790DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGP4790PBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
12 | IRGP4050 |
IRF |
PDP Switch |