This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V CE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC Absolute Maximum Ratings Paramet.
§ § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits Low temperature co-efficient of VCE (ON) ensures reduced power dissipation at operating junction temperatures Reverse voltage avalanche rating improves the robustness in sustain driver application Short fall & rise times for fast switching C VCES = 250V G E VCE(on) typ. = 1.64V @VGE = 15V, IC = 30A n-channel Description This IGBT is specifically designed for sustain & ene.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGP4055DPBF |
International Rectifier |
PDP TRENCH IGBT | |
2 | IRGP4062-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGP4062D-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGP4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGP4063-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGP4063D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRGP4063D1-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGP4063D1PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGP4063DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGP4063PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGP4065DPBF |
International Rectifier |
PDP TRENCH IGBT | |
12 | IRGP4065PBF |
International Rectifier |
PDP TRENCH IGBT |