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IRGP4740DPbF |
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| Part Number | IRGP4740DPbF |
| Manufacturer | International Rectifier |
| Description | IRGP4740DPbF IRGP4740D-EPbF VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C G Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCE(ON) typ. = 1.7V @ IC = 24A Appli... |
| Features |
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current C... |
| Document |
 IRGP4740DPbF Data Sheet
PDF 814.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGP4740D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 2 | IRGP4750D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 3 | IRGP4750DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 4 | IRGP4760-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 5 | IRGP4760D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|