IRGP430U - IRF

IRGP430U INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings .

Features

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 15A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratin.