IRGP4063PBF - International Rectifier

IRGP4063PBF INSULATED GATE BIPOLAR TRANSISTOR

PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCE.

Features

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• Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
• Rugged transient Performance for incr.