IRGP4062DPBF - International Rectifier

IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM  • Positive VCE (ON) Temperature co-efficient • Ultra.

Features

C
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA G
• 100% of the parts tested for ILM 
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode E n-channel
• Tight parameter distribution
• Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V CC Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
• Rugged transien.